Field-Induced Enhancement of Ferroelectric Switching in Hf 0.5 Zr 0.5 O ₂ Capacitors under Cryogenic Conditions

The cryogenic switching behavior of 10 nm Hf0.5Zr0.5O2 (HZO) capacitors is investigated down to −180 °C. A significant reduction in remanent polarization (2Pr) and suppression of the wake-up effect are observed as the measurement temperature is lowered. Systematic field-dependent measurements reveal that increasing the readout and/or wake-up voltage leads to a comparable 2Pr at cryogenic temperatures, indicating that the degradation arises from incomplete field-induced switching rather than intrinsic material instability. These results confirm that ferroelectric performance of HZO persists under cryogenic conditions, as long as sufficient electric fields are applied. The study offers practical insights into the design of cryogenic-compatible ferroelectric memory applications.