Interfacial misfit array formation for GaSb growth on GaAs

The manuscript reports that the initial strain relaxation of highly mismatched GaSb layers grown on GaAs (001) is governed by the two-dimensional (2D), periodic interfacial misfit (IMF) dislocation array growth mode. Under optimized growth conditions, only pure 90° dislocations are generated along both [110] and [11¯0] directions that are located at GaSb/GaAs interface, which leads to very low threading dislocation density propagated along the growth direction. The long-range uniformity and subsequent strain relaxation of the 2D and periodic IMF array are demonstrated via transmission electron microscopy and scanning transmission electron microscopy images at GaSb/GaAs interface.