Synthesis of High Quality n-type CdSe Nanobelts and Their Applications in Nanodevices

Cd-enriched ambient, high quality n -type CdSe nanobelts (NBs) with various electron concentrations (from ∼10 16 to 10 18 cm −3 ), which can meet different device requirements, were synthesized via the chemical vapor deposition (CVD) method. The electron mobilities are much higher than those reported previously for CdSe one-dimensional (1D) nanostructures. High performance single CdSe NB field effect transistors (NB-FETs) and CdSe NB/ p + -Si heterojunction light emitting diodes (HLEDs) are fabricated and studied. The NB-FETs have the best performance among the reported CdSe 1D nano-FETs with an on−off ratio of ∼3 × 10 8, a threshold voltage of ∼−4.1 V, and a maximum transconductance of ∼1.49 μS. The room temperature electroluminescence spectra of the HLEDs consist of only an intense CdSe band-edge emission peak (∼708 nm) with a full width at half-maximum of about 29 nm.