Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced <tex-math notation="LaTeX">I </tex-math> – <tex-math notation="LaTeX">V </tex-math> Characteristic for Switching Applications

Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width (Wfin) of 120 nm, a fin height (Hfin) of 250 nm, and a gate length (LG) of 200 nm. The proposed device achieved very low drain leakage(Ioff)-8A/mm at 7 V and-6A/mm at 100 V, which is four orders of improvement over IOFFof conventional Al(In)N/GaN HEMTs. In addition, the device exhibits a high ON-state current (ION) of 1.12 A/mm, a steep sub-threshold swing (S) of 63 mV/decade, a low drain-induced barrier lowering of 18.5 mV/V, and a high power-gain cutoff frequency (fT) of 21 GHz.