Atomic Layer Deposition of ZrO2 Thin Films with High Dielectric Constant on TiN Substrates

thin films were grown on substrates by atomic layer deposition. A high dielectric constant was obtained due to the formation of a high-temperature crystalline form, tetragonal or cubic. The origin of the formation of the high-temperature form was examined by depositing films on two types of surfaces, anatase and rutile. Tetragonal or cubic films were formed on both substrates. This suggests that growth-controlled selection is responsible for the formation of the metastable phase , not the minimization of interfacial energy.