The influence of the thin surface layer, formed by oxidation of a Ru electrode using ( for ), on the phase formation and dielectric properties of thin films grown by atomic layer deposition (ALD) is investigated. films grown on the as-received Ru electrode (no pretreatment) have an anatase structure and the dielectric constant is . However, the crystalline structure of the film grown on an pretreated Ru electrode is rutile, and the dielectric constant is . This is attributed to a structural compatibility between rutile and .
No takes yet. Share an insight, caveat, or question.
Kim et al. (2006) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: