Radiation‐Matter Interaction in Chemical Vapor Deposition‐Grown Two‐Dimensional Tungsten Disulfide

Two‐dimensional transition metal dichalcogenides (2D‐TMDs) have attracted immense interest due to their unique layer‐dependent physical properties and wide applicability in electronics, optoelectronics, and sensing devices. However, their response to high‐energy radiation, crucial for deployment in extreme environments, remains underexplored. In this work, we investigate the radiation‐matter interaction in chemical vapor deposition (CVD)‐grown tungsten disulfide (WS 2 ). The material is irradiated with varying doses of γ‐radiation ranging from 100 to 1000 Gy. The irradiated samples were systematically characterized using Raman spectroscopy, photoluminescence (PL), X‐ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and magnetic measurements. The results reveal that γ‐irradiation induces pronounced reductions in PL intensity, noticeable Raman peak shifts, and emerging magnetic responses at intermediate doses (≈500 Gy), indicating defect generation and lattice distortion. These findings enhance the understanding of γ‐ray interactions with 2D semiconductors and suggest that controlled irradiation could serve as a viable approach for tailoring their structural and optical characteristics for advanced device applications.