Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 9, 2001Applied Physics Letters

Ti/Al/Pt/Au and Al ohmic contacts on Si-substrated GaN

View Full Paper
Ask AI
Bookmark
Share

Authors

YZYanyan ZhaoCommonwealth Scientific and Industrial Research OrganisationRJRui JiangChinese Academy of SciencesPCP. Chen

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Zhao et al. (2001) studied this question.

synapsesocial.com/papers/6a6e0143f44fa9f079dbee6ahttps://doi.org/10.1063/1.1385189
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Low resistance ohmic contacts on wide band-gap GaN1994 · 442 citations
  2. 2In x Ga 1−x N light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off2000 · 186 citations
  3. 3Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for <i>n</i>-GaN1996 · 293 citations