Photoconductive antennas made on low-temperature-grown Be doped InxGa1−xAs (0.45⩽x⩽0.53) have been investigated focusing on the terahertz emission properties. In the antenna of x=0.45, the resistance as high as 3MΩ enabled us to increase the bias field up to 60kV∕cm, and the terahertz waves emitted from the antenna were significantly enhanced. In addition, terahertz waves with the spectral range over 2.5THz and the peak to noise ratio of 45dB were generated and detected using only 1.56μm pulses.
No takes yet. Share an insight, caveat, or question.
Takazato et al. (2007) studied this question.