Studying the short channel effect in the scaling of the AlGaN/GaN nanowire transistors

This study analyzes the scalability of nitride-based nanowire high electron mobility transistors. A fully self-consistent 3D model that solves drift-diffusion and Poisson equations is employed to investigate the short-channel effect (SCE). The scaling ability of nanowire transistors with a gate-length (Lg) of 100 nm to 20 nm is examined. The current-voltage curve, current gain, subthreshold swing, and drain-induced barrier lowering results are presented. The results show that the restrained SCE is provided by the excellent gate control of the nanowire transistor. Various wire widths and gate insulators are tested to minimize the SCE for the device with a 20 nm Lg.