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Carrier-concentration-dependent structure in curves of d²IdV² versus bias in n-type GaAs-Pb tunnel junctions is compared with the bulk-plasmon and surface-plasmon energies of the GaAs sample. The bulk-plasmon energy is determined directly from infrared-reflectivity measurements. The conclusion is consistent with the previous suggestion that this structure can be interpreted as due to excitation of surface plasmons in the GaAs electrode by tunneling electrons.
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Tsui et al. (1969) studied this question.
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