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Structure in d²IdV², which corresponds to an increase in conductance at bias voltages equivalent to the surface plasmon energy in GaAs, is observed in n-type GaAs-Pb tunnel junctions. Its dependence on the electron concentration of the GaAs electrode has been studied. These data are consistent with the interpretation that the observed structure in d²IdV² is due to surface plasmon excitation in the GaAs electrode by tunneling electrons.
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D. C. Tsui (1969) studied this question.
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