Transport mechanisms in GaAlAs-based laser structures

This is the authors' abstract. We don't add key points for this paper.

I-V characteristics of GaAlAs/GaAs laser structures were measured over wide ranges of currents and temperatures. Complex-shaped curves have been found and interpreted in terms of the contributions of several transport mechanisms with tunnelling in the pn junction being the dominant effect. Inhomogeneities with an increased impurity concentration are proposed to be responsible for both the tunnelling currents in the reverse direction and the excess tunnelling currents in the forward direction. To explain the voltage dependence of the tunnelling currents at small reverse voltages a correction of the standard model of reverse tunnelling currents is suggested, which considers a more realistic voltage dependence of the electric field in the pn junction.