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August 1, 1984IEEE Journal of Quantum Electronics

Fabrication, characterization, and analysis of mass-transported GaInAsP/InP buried-heterostructure lasers

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ZLZ. L. LiauMIT Lincoln LaboratoryJWJ. N. WalpoleMIT Lincoln LaboratoryDTD. Z. TsangMIT Lincoln Laboratory

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Liau et al. (1984) studied this question.

synapsesocial.com/papers/6a6fbc7fac440176ef286506https://doi.org/10.1109/jqe.1984.1072484
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Also Consider

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  1. 1Deformation-free overgrowth of InGaAsP DFB corrugations1983 · 28 citations
  2. 2On the Formation of Planar‐Etched Facets in GaInAsP / InP Double Heterostructures1983 · 33 citations
  3. 3Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15–1.31-μm spectral region1978 · 42 citations
  4. 4Temperature dependence of the lasing threshold current of double heterostructure injection lasers due to drift current loss1980 · 23 citations
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