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The effects of a surface photovoltage on band bending determined by photoemission were investigated experimentally and theoretically for Cs on p-type GaAs(110). Calculations based on carrier recombination by thermionic emission as well as tunneling are in excellent agreement with experimental data. Surface photovoltages are found to contribute noticeably only in the case of low dopant concentrations n and low temperatures (n10¹⁸/cm³ and T280 K for a Schottky-barrier height of 0.7 eV). General criteria for the influence of surface photovoltages in photoemission studies of Schottky contacts are established.
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Bauer et al. (1991) studied this question.
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