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Spectroscopic analysis reveals a bulk photovoltaic effect in carbon-doped gallium nitride, highlighting defect-driven polarization from isolated and tricarbon complexes.
A bulk photovoltaic effect was observed in insulating carbon-doped gallium nitride crystals by investigating the light-induced change of the contact potential difference with a Kelvin probe as a function of the carbon concentration in the crystal. Bulk polarization was caused by excitation of defects setting in at photon energies of 0.95--1.05 eV (C1) and 2.5--2.6 eV (C3). From the dependence on the carbon concentration, C1 can be assigned to isolated carbon defects and C3 to tricarbon defects.
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Levine et al. (2020) studied this question.
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