Calculations are made of the rates at which bursts of electronic charge are created in silicon by cosmic rays at sea level. These rates are reduced to two types: point charge bursts and distributed ionization wake bursts. A procedure is shown to evaluate the soft fail rates of simple devices caused by cosmic rays. It is shown that an 8-M byte semiconductor memory made of 10×10 μm diodes will have a soft fail rate of about one per day.
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Ziegler et al. (1981) studied this question.
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