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November 9, 1992Applied Physics Letters

Enhanced spectral power density and reduced linewidth at 1.3 μm in an InGaAsP quantum well resonant-cavity light-emitting diode

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Authors

NHN. E. J. HuntAT&T (United States)ESE. F. SchubertUniversity of Nebraska–LincolnRLR. A. LoganAT&T (United States)

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Hunt et al. (1992) studied this question.

synapsesocial.com/papers/6a6f2bfd26770c2b8ddfdebchttps://doi.org/10.1063/1.108489
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