Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 1, 1977IEEE Journal of Quantum Electronics

New structures of GaAlAs lateral-injection laser for low-threshold and single-mode operation

View Full Paper
Ask AI
Bookmark
Share

Authors

WSW. SusakiMitsubishi Group (Japan)TTToshio TanakaKyoto UniversityHKHirofumi KanNational Center for High-Performance Computing

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Susaki et al. (1977) studied this question.

synapsesocial.com/papers/6a6f2c8135aa2c282ce09404https://doi.org/10.1109/jqe.1977.1069401
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1A new geometry double-heterostructure injection laser for room-temperature continuous operation: junction-stripe-geometry DH lasers1973 · 14 citations
  2. 2Striped-substrate double-heterostructure lasers1975 · 25 citations
  3. 3JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE1970 · 600 citations
  4. 4A GaAs-Al x Ga 1- x As Double Heterostructure Planar Stripe Laser1973 · 202 citations
  5. 5Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operation1972 · 160 citations