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July 28, 2005Applied Physics Letters

Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching

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Authors

RSRajat SharmaLovely Professional UniversityEHElaine D. HabererUniversity of California, RiversideCMC. MeierCentre National de la Recherche Scientifique

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Sharma et al. (2005) studied this question.

synapsesocial.com/papers/6a6f2c838031ec7bb1dba197https://doi.org/10.1063/1.2008380
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