The technique of cross-sectional transmission electron microscopy has been applied to study the nature of the radiation damage in GaAs bombarded with 300 keV protons to total doses of 1015 and 5×1015 protons cm−2. The results indicate that upon annealing at temperatures of 500 °C and above, the precipitated damage becomes visible in the form of hydrogen platelets (i.e., hydrogen-filled edge vacancy loops) on the {110} cleavage planes of GaAs.
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Neethling et al. (1986) studied this question.
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