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Minority carrier lifetime in the active layer of GaAs-Ga1-x- AlxAs double-heterostructure lasers has been found to decrease during gradual degradation by measuring the lasing delay time. This phenomenon is ascribed to a decrease in the internal quantum efficiency. Furthermore, a development of the inhomogeneity in the active layer is deduced from observations of the change of near-field patterns, light intensity versus current characteristics, and photoluminescence patterns.
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Chinone et al. (1974) studied this question.
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