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November 1, 1964Applied Physics Letters

TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GaAs LASERS

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Authors

GDG. C. DousmanisRCA (United States)HNH. NelsonRCA (United States)DSD. L. StaeblerUniversity of Miami

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Dousmanis et al. (1964) studied this question.

synapsesocial.com/papers/6a6f2cbc78a11c550e08dabchttps://doi.org/10.1063/1.1754104
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Also Consider

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  4. 4EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GaAs1963 · 40 citations