GaAlAs/GaAs MOCVD Growth for Surface Emitting Laser

A GaAlAs/GaAs Metalorganic chemical vapor deposition (MOCVD) has been introduced for growing GaAlAs/GaAs wafers with a thick active layer ( d 3 µm) and multilayer Bragg reflectors for surface emitting lasers. A nominal threshold current density as low as 3.6 kA/cm 2 µm was obtained in stripe cleaved lasers with a cavity length of 400 µm. GaAlAs/GaAs surface emitting lasers were fabricated by using these MOCVD grown wafers. The room-temperature pulsed operation of an MOCVD grown laser was obtained with a threshold current of 300 mA as a primary demonstration. In addition, a reflectivity of 97% was achieved by a Zn-doped 30 layer Ga 0.9 Al 0.1 As/AlAs Bragg reflector. These experimental results suggest the possibilities of a low-threshold surface emitting laser grown by MOCVD and potential applications toward integrated optics based on surface emitting lasers.