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October 1, 1975IEEE Transactions on Electron Devices

Surface doping using ion implantation for optimum guard layer design in COS/MOS structures

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Authors

EDE. C. DouglasAtomic Energy (Canada)ADA.G.F. DingwallPrinceton University

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Douglas et al. (1975) studied this question.

synapsesocial.com/papers/6a6f2d0dfe4101aa97dfb65ehttps://doi.org/10.1109/t-ed.1975.18233
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