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March 1, 1967IEEE Transactions on Electron Devices

Effect of surface fields on the breakdown voltage of planar silicon p-n junctions

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Authors

AGAndrew S. GroveMessiah UniversityOLOtto LeistikoUniversity of CopenhagenWHW.W. HooperHRL Laboratories (United States)

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Grove et al. (1967) studied this question.

synapsesocial.com/papers/6a6f2d4235aa2c282ce09581https://doi.org/10.1109/t-ed.1967.15916
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Effect of Variations in Surface Potential on Junction Characteristics1959 · 12 citations
  2. 2A theory of voltage breakdown of cylindrical P-N junctions, with applications1957 · 22 citations
  3. 3The silicon insulated-gate field-effect transistor1963 · 265 citations