Answers are grounded in this paper and cite their sources.
In this letter, hot-carrier-induced on-resistance (Ron) degradation in lateral DMOS transistors with different n-type drift-drain (NDD) region concentration is investigated. Increasing NDD concentration results in greater bulk (Ib) and gate currents (Ig), but Rondegradation is improved. Technology computer-aided design simulations reveal that high NDD concentration increases impact-ionization rate in accumulation (related to Ibincrease) and channel regions (related to Igincrease) but reduces impact-ionization rate in spacer region. Charge-pumping data confirm that hot-carrier-induced interface state created in the spacer region is reduced, leading to improved Rondegradation in high-NDD-concentration device.
No takes yet. Share an insight, caveat, or question.
Chen et al. (2008) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: