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October 1, 1976IEEE Journal of Solid-State Circuits

A computer-aided design model for high-voltage double diffused MOS (DMOS) transistors

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Authors

MPM.D. PochaLawrence Livermore National LaboratoryRDR.W. DuttonHEC Montréal

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Pocha et al. (1976) studied this question.

synapsesocial.com/papers/6a6f2d4135aa2c282ce0957fhttps://doi.org/10.1109/jssc.1976.1050803
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Also Consider

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  1. 1Carrier mobility and current saturation in the MOS transistor1965 · 86 citations
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  4. 4Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers1970 · 229 citations