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March 1, 1977IEEE Transactions on Electron Devices

A simple two-dimensional model for IGFET operation in the saturation region

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Authors

YEY.A. El-MansyIntel (United States)ABArthur BoothroydSan Diego State University

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El-Mansy et al. (1977) studied this question.

synapsesocial.com/papers/6a6f2dba8031ec7bb1dba1f8https://doi.org/10.1109/t-ed.1977.18716
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1An injection level dependent theory of the MOS transistor in saturation1972 · 22 citations
  2. 2Mathematical 2-dimensional model of semiconductor devices1971 · 26 citations
  3. 3Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST)1965 · 81 citations
  4. 4IGFET Analysis through numerical solution of Poisson's equation1968 · 30 citations