Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 1, 1967Proceedings of the IEEE

Effects of ionizing radiation on oxidized silicon surfaces and planar devices

View Full Paper
Ask AI
Bookmark
Share

Authors

ESE. H. SnowUniversity of UtahAGAndrew S. GroveMessiah UniversityDFD.J. FitzgeraldMarquette University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Snow et al. (1967) studied this question.

synapsesocial.com/papers/6a6f2e4426770c2b8ddfe0f1https://doi.org/10.1109/proc.1967.5776
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1A comparison of radiation tolerance of field effect and bipolar transistors1965 · 9 citations
  2. 2Differential Capacity Measurements at Carbon Electrodes1966 · 19 citations
  3. 3Photocurrent, Space-Charge Buildup, and Field Emission in Alkali Halide Crystals1953 · 225 citations
  4. 4Limitations of the MOS capacitance method for the determination of semiconductor surface properties1965 · 131 citations
  5. 5THE EFFECT OF LOW-ENERGY ELECTRON IRRADIATION OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES1965 · 81 citations