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November 1, 1962IRE Transactions on Electron Devices

Avalanche breakdown characteristics of a diffused P-N junction

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Authors

DKDavid P. KennedyRAND CorporationROR. R. O’BrienIBM (United States)

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Kennedy et al. (1962) studied this question.

synapsesocial.com/papers/6a6f2e812163a0a01bc384c8https://doi.org/10.1109/t-ed.1962.15023
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Avalanche Breakdown in Silicon1954 · 481 citations
  2. 2The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors1949 · 2,151 citations
  3. 3Diffused Junction Depletion Layer Calculations1960 · 101 citations
  4. 4Uniform Silicon p-n Junctions. II. Ionization Rates for Electrons1960 · 105 citations
  5. 5Determination of Avalanche Breakdown in pn Junctions1959 · 44 citations