Formation of structure defects and behaviour of ion-implanted boron in silicon under annealing in various ambients

Structure defects and the electrically active impurity distribution within (001)-oriented silicon layers after implantation of 100 keV 11B+ ions to a dose of 6.25 × 1014 ions/cm2 and subsequent annealing in inert (dry N2) and oxidizing (dry O2, steam) ambients are studied. It is found that annealing in oxidizing ambients as compared to that in N2 leads to the following results: i) a substantial increase in the density and size of the imperfect Frank dislocation loops; ii) a formation of dislocation configurations close to the misfit dislocations; iii) an enhancement of the boron diffusion; iv) a decrease in the electrically active boron near the silicon-oxide interface. The results obtained are interpreted in terms of the lattice oversaturation with silicon self-interstitials generated during the process of ion implantation and thermal oxidation as well as of the misfit stress influence.