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November 1, 1969Philosophical magazine

Oxidation, defects and vacancy diffusion in silicon

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Authors

ISI. R. SandersJohn Innes CentrePDP. S. DobsonStellenbosch University

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Sanders et al. (1969) studied this question.

synapsesocial.com/papers/6a6f2ef178a11c550e08dd73https://doi.org/10.1080/14786436908228058
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