X-Ray Rocking Curve Study of the Strain Profile Formed by MeV Ion Implantation into (111) Silicon Wafers

Ni, Cu and Au ions were implanted into silicon (111) wafers at irradiation energies of 80–230 MeV with doses of 0.1–5.0×10 14 atoms/cm 2 . X-ray rocking curves from the wafers were investigated using the dynamical diffraction theory. Strain profiles obtained by curve fitting revealed that the energy loss per unit length (energy deposition) due to a nuclear collision played an important role in the expansion of the lattice spacing. The height of the main peak of the strain profile was proportional to the dose of ion implantation. In the case of Au implantation, an additional distortion near the crystal surface and a uniform expansion of the lattice spacing in the distorted layer were observed.