Strain profiles in ion-doped silicon obtained from X-ray rocking curves

A rapid numerical method of the calculation of X-ray rocking curves (RC) from crystals with thin surface damaged layers is developed on the basis of a semi-kinematical approach. The determination of the strain profile in the layer from experimental RC's by a „best correspondence”︁ fitting procedure is demonstrated. Strain profiles in Si crystals doped with boron ions with energy from 40 to 100 keV are obtained and discussed in comparison with the distributions of impurity atoms and radiation defects found by other experimental techniques.