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January 1, 1970Radiation Effects

Spatial distribution of energy deposited into atomic processes in ion-implanted silicon

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DBD.K. BriceUnited States Department of Energy

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D.K. Brice (1970) studied this question.

synapsesocial.com/papers/6a853d7af2bb7ee68cf23fdchttps://doi.org/10.1080/00337577008235048
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering1968 · 277 citations
  2. 2Partition of the Average Energy Deposited in Silicon as a Function of Incident Neutron Energy1967 · 16 citations
  3. 3DEPTH DISTRIBUTION OF EPR CENTERS IN 400-keV O+ ION-IMPLANTED SILICON1970 · 40 citations
  4. 4Ion implantation in semiconductors—Part I: Range distribution theory and experiments1968 · 244 citations
  5. 5DEPTH DISTRIBUTION OF DIVACANCIES IN 400-keV O+ ION-IMPLANTED SILICON1970 · 45 citations