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The depth distribution of Si-P3 centers in 400-keV O+ ion-implanted silicon was determined using EPR measurements in conjunction with anodization and stripping of the implanted layer. The depth distribution of the EPR centers compares favorably to theoretical calculations by Brice for the depth distribution of the energy deposited into atomic processes and with infrared absorption measurements of the depth distribution of divacancies by Stein, Vook, and Borders. The combined EPR and infrared measurements indicate that the Fermi level in the damaged layer lies between Ec − 0.21 eV and Ev + 0.25 eV.
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Brower et al. (1970) studied this question.
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