Effect of Fast Cooling on Diffusion-Induced Imperfections in Silicon

Misfit dislocations in phosphorus‐diffused silicon are shown to suffer rearrangement on fast cooling. These dislocations extend in specific directions and act as centers of phosphorus precipitates. There are also other areas of precipitation where the particles are of irregular shape and size. The motion of dislocation network in the depths of the diffusion profile is mainly by glide, although a less dominant climb motion is observed.