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We have considered the influence of electron irradiation energy of 300, 600 and 900 eV on the stuctural, electrical and optical properties of GZO/<TEX>TiO₂</TEX> thin films prepared with RF magentron sputtering. The optical transmittance and electrical resistivity of the films were dependent on the electron's irradiation energy. The electron irradiated GZO/<TEX>TiO₂</TEX> films at 900 eV are grown as a hexagonal wurtzite phase and the resistivity is decreased with electron irradiation energy. The GZO/<TEX>TiO₂</TEX> films irradiated at 900 eV shows the lowest resistivity of <TEX>4.3×10⁻³Ωcm</TEX>. The optical transmittance in a visible wave length region also increased with the electron irradiation energy. The film that electron irradiated at 900 eV shows 82% of optical transmittance and higher work function of 5.18 eV in this study.
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Kim et al. (2013) studied this question.
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