Answers are grounded in this paper and cite their sources.
Results are presented of a new calculation of the surface states at the (110) surface of GaAs. By using Koster-Slater parameters fitted to bulk optical and photoemission data, the surface band structure has been calculated with a LCAO method. The main conclusion is the existence of two surface bands, one inside the band gap at about 1 eV from the top of the valence band and the other a few tenths of an eV below it. The results show good agreement with the available experimental data.
No takes yet. Share an insight, caveat, or question.
Calandra et al. (1975) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: