Sulfur-doped GaP has been implanted with 250-keV Zn ions to a total dose of 1016 cm−2 and then annealed at 900 °C. Hall data obtained with the van der Pauw configuration indicate type conversion in a surface layer that has a thickness, estimated from diffusion data and electrical transport properties, on the order of 10 μm. For large implant doses followed by annealing, the diffusion of Zn in GaP plays a significant role in the final location of the implanted ions.
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Hemenger et al. (1973) studied this question.
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