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From spin resonance of two-dimensional (2D) conduction electrons in a modulation doped SiGe/Si/SiGe quantum well structure we find a 2D anisotropy of both the line broadening (dephasing time) and the g factor. Both can be explained consistently employing the Bychkov-Rashba (BR) term HBR=α(k×σ)·ez, which turns out here to be the dominant coupling between electron orbital motion and spin. We obtain a BR parameter of α=0.55×10^-12eVcm---three orders of magnitude smaller than in quantum well structures based on III-V semiconductors, consistent with the much smaller spin-orbit coupling in Si.
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Wilamowski et al. (2002) studied this question.
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