Schottky barrier height modification on n- and p-type GaInP with thin interfacial Si

Al/n:GaInP and Al/p:GaInP Schottky diodes have been grown by molecular-beam epitaxy with and without thin (6 Å) interfacial Si layers. The Schottky barrier heights were measured by C-V, I-V, and I-V-T techniques. The n- and p-type barrier heights for the samples without interfacial Si were 0.86 and 0.93 eV, respectively. Interfacial Si enhanced the n-type barrier by 0.17 eV, and reduced the p-type barrier by 0.08 eV. The sum of the n- and p-type barrier heights for the samples with the Si layer was equal to the band gap of GaInP; without Si the sum was less. By comparing this data to the Al/Si/GaAs data, GaAs-GaInP conduction- and valence-band discontinuities of 0.05 and −0.41 eV, respectively, have been inferred.