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Dry etching of GaN in Cl2/H2/CH4/Ar has been compared using electron cyclotron resonance (ECR), inductively coupled plasma (ICP), and reactive ion etch (RIE) systems. GaN etch rates and surface morphology were obtained as a function of RF power, and showed significant improvements under high density plasma conditions.
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Shul et al. (1996) studied this question.
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