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April 15, 1984Journal of Applied Physics

Molecular beam epitaxial growth of GaP on Si

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Authors

SWSteven L. WrightOxford Instruments (United Kingdom)HKH. KroemerUniversity of California, Santa BarbaraMIMasanori InadaPanasonic (Japan)

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Wright et al. (1984) studied this question.

synapsesocial.com/papers/6a6f72d88031ec7bb1dbc13bhttps://doi.org/10.1063/1.333333
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