What question did this study set out to answer?

Determine the spectral dependence and magnitude of carrier-induced refractive index changes in gallium arsenide lasers operated up to the lasing threshold.

July 1, 1981Journal of Applied Physics

Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers

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Authors

CHC. H. HenryBoston University RLR. A. LoganAT&T (United States)KBK. A. BertnessDefense Advanced Research Projects Agency

Discussion

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Implication

Spectroscopic analysis demonstrates carrier injection decreases the refractive index in gallium arsenide lasers, indicating significant phase and gain coupling near threshold.

Key Points

Determine the spectral dependence and magnitude of carrier-induced refractive index changes in gallium arsenide lasers operated up to the lasing threshold.
Analyzed the spontaneous emission spectrum of a buried heterostructure window laser across excitation levels from low current to lasing threshold.
Converted spontaneous emission spectra into optical gain spectra to determine carrier-induced variations in the imaginary component of the refractive index.
Applied a Kramers-Kronig transformation to the gain spectra to calculate the corresponding changes in the real refractive index.
Demonstrated that the real refractive index change in the GaAs active layer varies slightly sublinearly with minority carrier density.
Measured a refractive index shift Δn′ = −0.025 ± 0.005 and differential index dn′/dnc = −(1.8 ± 0.4) × 10⁻²⁰ cm³ at an estimated threshold carrier density of 1.02 × 10¹⁸ cm⁻³.
Found the ratio of real refractive index change to imaginary refractive index change near the lasing threshold to be approximately 6.2.

Cite This Study

Henry et al. (1981) studied this question.

synapsesocial.com/papers/6a6f72de87f92105712723ee https://doi.org/10.1063/1.329371

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July 1, 1981Journal of Applied Physics

Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers

View Full Paper

Ask AI

Bookmark

Authors

CHC. H. HenryBoston University RLR. A. LoganAT&T (United States)KBK. A. BertnessDefense Advanced Research Projects Agency

Discussion

Member takes

Implication

Spectroscopic analysis demonstrates carrier injection decreases the refractive index in gallium arsenide lasers, indicating significant phase and gain coupling near threshold.

Key Points

Determine the spectral dependence and magnitude of carrier-induced refractive index changes in gallium arsenide lasers operated up to the lasing threshold.
Analyzed the spontaneous emission spectrum of a buried heterostructure window laser across excitation levels from low current to lasing threshold.
Converted spontaneous emission spectra into optical gain spectra to determine carrier-induced variations in the imaginary component of the refractive index.
Applied a Kramers-Kronig transformation to the gain spectra to calculate the corresponding changes in the real refractive index.
Demonstrated that the real refractive index change in the GaAs active layer varies slightly sublinearly with minority carrier density.
Measured a refractive index shift Δn′ = −0.025 ± 0.005 and differential index dn′/dnc = −(1.8 ± 0.4) × 10⁻²⁰ cm³ at an estimated threshold carrier density of 1.02 × 10¹⁸ cm⁻³.
Found the ratio of real refractive index change to imaginary refractive index change near the lasing threshold to be approximately 6.2.

Cite This Study

Henry et al. (1981) studied this question.

synapsesocial.com/papers/6a6f72de87f92105712723ee https://doi.org/10.1063/1.329371

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