What question did this study set out to answer?

To measure the refractive index, optical anisotropy, and temperature dependence of gallium nitride across various photon energies.

August 16, 1971physica status solidi (a)

Refractive index of GaN

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Authors

EEE. EjderMagnolia Solar (United States)

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Overview

Experimental spectroscopy reveals the refractive index and temperature dependence of gallium nitride, indicating fundamental optical properties for optoelectronic applications.

Key Points

To measure the refractive index, optical anisotropy, and temperature dependence of gallium nitride across various photon energies.
Conducted optical transmission and reflection measurements on plane-parallel GaN platelets with perpendicular (E ⊥ c) and parallel (E ‖ c) polarizations at varying temperatures up to 300 K.
Measured the diffuse reflection spectrum of GaN powder across photon energies to analyze the temperature dependence of the absorption edge.
For polarization perpendicular to the c-axis (E ⊥ c) at 300 K, the refractive index measured 2.67 at 3.38 eV and 2.33 at 1.0 eV, with an extrapolated value of 2.29 ± 0.005 at 0 eV.
The relative difference in refractive index between E ⊥ c and E ‖ c was 1.5 ± 0.2% at 5000 Å, and the temperature dependence yielded an estimated Debye temperature of approximately 600 K.

Cite This Study

E. Ejder (1971) studied this question.

synapsesocial.com/papers/6a71cff931a3df824329d2d8 https://doi.org/10.1002/pssa.2210060212

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August 16, 1971physica status solidi (a)

Refractive index of GaN

View Full Paper

Ask AI

Bookmark

Authors

EEE. EjderMagnolia Solar (United States)

Discussion

Member takes

Overview

Experimental spectroscopy reveals the refractive index and temperature dependence of gallium nitride, indicating fundamental optical properties for optoelectronic applications.

Key Points

To measure the refractive index, optical anisotropy, and temperature dependence of gallium nitride across various photon energies.
Conducted optical transmission and reflection measurements on plane-parallel GaN platelets with perpendicular (E ⊥ c) and parallel (E ‖ c) polarizations at varying temperatures up to 300 K.
Measured the diffuse reflection spectrum of GaN powder across photon energies to analyze the temperature dependence of the absorption edge.
For polarization perpendicular to the c-axis (E ⊥ c) at 300 K, the refractive index measured 2.67 at 3.38 eV and 2.33 at 1.0 eV, with an extrapolated value of 2.29 ± 0.005 at 0 eV.
The relative difference in refractive index between E ⊥ c and E ‖ c was 1.5 ± 0.2% at 5000 Å, and the temperature dependence yielded an estimated Debye temperature of approximately 600 K.

Cite This Study

E. Ejder (1971) studied this question.

synapsesocial.com/papers/6a71cff931a3df824329d2d8 https://doi.org/10.1002/pssa.2210060212

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