Effective barrier height, conduction-band offset, and the influence of p-type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface

We demonstrate that the effective band discontinuity at an n-isotype heterojunction interface can be significantly modified by introducing p-type δ doping close to the interface during molecular beam epitaxy growth. This is shown for the case of the relaxed InAs-GaAs interface where the band discontinuities with and without δ doping have been measured by the I-V technique coupled with appropriate numerical modeling of the interface.