Resonant Fowler–Nordheim tunneling in n−GaAs-undoped AlxGa1−xAs-n+GaAs capacitors

Periodic structure is observed in the current-voltage characteristics at 4.2 K of n−GaAs-AlxGa1−xAs-n+GaAs capacitors, grown by molecular beam epitaxy, which have AlxGa1−xAs thicknesses of 30–35 nm. The periodicities can be explained quantitatively by the theory of resonant Fowler–Nordheim tunneling.