Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 21, 1982Electronics Letters

Tunnelling through GaAs-Al x Ga 1− x As-GaAs double heterojunctions

View Full Paper
Ask AI
Bookmark
Share

Authors

DDD. DelagebeaudeufTechnicolor (France)PDP. DelescluseCentre National de la Recherche ScientifiquePÉP. ÉtienneUniversité Paris-Sud

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Delagebeaudeuf et al. (1982) studied this question.

synapsesocial.com/papers/6a82fda55b5082326951a7ddhttps://doi.org/10.1049/el:19820059
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Transport properties in GaAs-Al x Ga 1− x As heterostructures and MESFET application1981 · 38 citations
  2. 2High Electron Mobility Transistor Logic1981 · 122 citations
  3. 3Investigation of heterojunctions for MIS devices with oxygen-doped AlxGa1−xAs on n-type GaAs1979 · 61 citations
  4. 4Superlattice and Negative Differential Conductivity in Semiconductors1970 · 3,334 citations
  5. 5Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures1981 · 40 citations